Parameter extraction method for a physics‐based lumped‐charge SiC MPS diode model

Parameter Extraction Software For Compact Diode Model

I A reliable device model is crucial for the development d implementation of a circuit design. However, the sation of a high quality model requires a significant lount of timeand money. The software package presented this paper seeks to minimize the timeand money invested the realization of a high quality model for SiC Schottky, erged PiN Schottky, and PiN Power diodes based on cNutt and Mantoo...

Parameter Extraction for a Power Diode Circuit Simulator Model Including Temperature Dependent Effects

Power electronics designers need accurate models of power diodes to perform simulations of the systems they are designing. The diode models should be accurate under a wide variety of operating conditions. In particular temperature dependencies should be accurately modeled. Physics-based models appear to be the best choice to meet these requirements. On the other hand, complicated parameter extr...

An Alternative Method for Compact Model Construction and Parameter Extraction

The conventional method to extract circuit parameters from device simulators is through I-V and C-V curve-fitting on a presumed device model, whose basic form is often analytically derived using drift-diffusion equations with space-charge-region approximation. The resulting device model is usually either too simple to reflect detailed device behaviors or too complex that most of its internal pa...

Ruggedness of 1200 V SiC MPS diodes

A Window-Based Method for Automatic Typographic Parameter Extraction

The synthesis of existing fonts with characters represented by parametrized structure elements requires determining a set of font-specific global and local parameters. Parameters comprise, for example, the widths of vertical stems, horizontal bars and curved elements, the spacing between vertical stems, the relative position of the junction between arches and vertical bars and serif measures. T...